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Experiments and Instructions
Every group completes seven days of experiments ("Versuchstage" VT):
Experimental block A:
- Single day experiments (N2, N4, N6, N7):
These will take place on Wednesday during term time. - Two-day experiments (N1):
The first day will be a Wednesday during term time; the second day will take place within one week (latest on the following Tuesday), in accordance with the tutor.
Experimental block B:
- 4 lab days: 2-4 experiments from Laboratory experiments in Jülich.
The experiments take place as part of the JARA-FIT Ferienpraktikums "Nanoelektronik" in the week 11.03.2024 - 18.03.2024 in Jülich (no additional registration on the Jülich webpage required). All participants have to take part in the full-day introduction lecture on 11.03.2024.
Experimental block C:
- 5 lab days: Experimental block "from material to a device" (Institut für Werkstoffe der Elektrotechnik)
- The experiments take place during the term SS 2024. The dates are arranged with the respective tutor. The experiment block "from material to a device" covers five days and gives you a practical introduction for important aspects of electronic ceramics for future memory technologies. Exemplary a ferromagnetic RAM memory cell will be assembled and characterised and compared with a DRAM. All technological steps for the preparation of electro ceramic thin films will be introduced and carried out. Afterwards, the for memory cells relevant properties are measured. The individual steps include:
- Wet chemical deposition and technology of ceramic thin films part I: preparation of wet chemical plating solutions in a chemical lab.
- Wet chemical deposition and technology of ceramic thin films part II: deposition of the afore prepared solutions for the fabrication of ferroelectric capacities.
- Integration of the ferroelectric capacitors on a chip carrier and contacting using wedge-wedge-bonding.
- Electrical characterisation of the encapsulated electro ceramic thin films.
- Assembly and computer controlled accessing of a 2x2 memory array consisting of 1T/1C FeRAM cells.
- Fabrication of a Si-chip with CMOS transistors and digital circuit building blocks (inverters, NAND-gate, half-adder)
- Characterization of the fabricated transistors allows observing the impact of fabrication on device and circuit performance
- wafer cleaning, optical lithography, plasma-enhanced CVD, rapid thermal oxidation, dry etching (ICP-RIE), metalization (etching and lift-off)
- spectroscopic ellipsometry, scanning electron microscopy, electrical transport
Experimental block D:
7 lab days: The experiment block "CMOS Lab course" covers seven days and takes place every second Wednesday during the lecture period. Objectives of the course are
The e-mail addresses of the tutors can be found by clicking the respective link.
Most student labs are in the Modulbau (MB) next to the physics hall in front of tower 26. The laboratory experiments take place in the Physikzentrum.
Overview: Experiments
Experiments (Solid state physics)
| N1 | Atomic/Magnetic Force Microscopy (AFM / MFM) (2 days) Room: MB 007, Details / Instructions Download:
Please note that the protocol has the be written as a publication in the APS style (5 to 7 pages long). Download the file "Paper Templates". Open the file "scientificwriting.pdf" and read it carefully before the experiment day. The content of "scientificwriting.pdf" will be part of the discussion prior the experiment. |
| N3 | Superconductivity and SQUID Room: MB 012, Details / Instructions Download:
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Phone
Our staff can be reached via phone
| from inside the RWTH: | use the listed 5-digit direct dial |
| from Aachen | use a prefix: 80-(direct dial) |
| from Germany | use a prefix: 0241-80-(direct dial) |
| from outside Germany | use a prefix: +49-241-80-(direct dial) |
