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News 30.10.2014
New publication: Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices
Phys. Rev. X 4, 041019 (2014)
We perform systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. (more)
