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News 05.07.2025
New publication: Electric-Field-Tunable Spin−Orbit Gap in a Bilayer Graphene/WSe2 Quantum Dot

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News 08.10.2014

New publication: Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature

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Nano Lett. 14, 6050 (2014)
We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene–hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20,000 cm2/(Vs).

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