Phys. Rev. Lett. 113, 126801 (2014)
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times τ_φ as well as the inter- and intra-valley scattering times τ_i and τ_∗. While τ_φ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting τ_φ at low temperatures. The analysis of τ_i and τ_∗ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.