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16.12.2025

New publication: Trembling motion of electrons driven by Larmor spin precession

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npj Spintronics 3, 52 (2025)
We show that the initialization of an ensemble of electrons in the same spin state in strained n-InGaAs subject to a perpendicular magnetic field triggers an AC electric current at GHz frequencies. The AC current emerges in the absence of any electric driving force and survives until the coherent precession of the electron spins is lost. The current amplitude increases linearly with both the spin-orbit coupling strength and the external magnetic field. The generation mechanism of the observed oscillatory charge motion can be fruitfully described in terms of the periodic trembling motion of spin-polarized electrons, which is a solid-state analog to the Zitterbewegung of free Dirac electrons. Our results demonstrate that the hidden consequence of relativistic quantum mechanics is realized and can be studied in a rather simple solid-state system at moderate temperatures. Furthermore, the large amplitude of the AC current at high magnetic fields enables ultra-fast spin sensitive electric read-out in solids.

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14.12.2025

New publication: MaskTerial: a foundation model for automated 2D material flake detection

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Digital Discovery 4, 3744(2025)
The detection and classification of exfoliated two-dimensional (2D) material flakes from optical microscope images can be automated using computer vision algorithms. This has the potential to increase the accuracy and objectivity of classification and the efficiency of sample fabrication, and it allows for large-scale data collection. Existing algorithms often exhibit challenges in identifying low-contrast materials and typically require large amounts of training data. Here, we present a deep learning model, called MaskTerial, that uses an instance segmentation network to reliably identify 2D material flakes. The model is extensively pre-trained using a synthetic data generator that generates realistic microscopy images from unlabeled data. This results in a model that can quickly adapt to new materials with as little as 5 to 10 images. Furthermore, an uncertainty estimation model is used to finally classify the predictions based on optical contrast. We evaluate our method on eight different datasets comprising five different 2D materials and demonstrate significant improvements over existing techniques in the detection of low-contrast materials such as hexagonal boron nitride.

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11.11.2025

New publication: Tailoring Phonon Polaritons in hBN with the Plasmonic Phase-Change Material In3SbTe2

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Nano Letters 25, 15809 (2025)
Polaritons in van-der-Waals materials (vdWMs) promise high confinement and multiple tailoring options by resonators and launching structures which conventionally require cumbersome lithography techniques. Optical programming of phase-change materials (PCMs) offers fast and reconfigurable fabrication of these structures. As the plasmonic PCM In3SbTe2 can be switched between a dielectric and metallic phase, In3SbTe2 is promising for optical programming of metallic launching structures to tailor and confine polaritons in vdWMs. Here, we combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN’s phonon polaritons into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the confinement up to λ/39 and achieve a quality factor of 72. Finally, we fabricate a focusing structure for hBN’s polaritons whose focal point we reconfigure. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWMs.

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28.10.2025

Visit of PASSQAL workshop in Sendai

Bernd Beschoten gave a talk on the magnetic phases in bilayer graphene at the 2nd PASSQAL Workshop in Sendai. The workshop on "physics and application of spatial structures on spin, quantum state and light" was hosted by Prof. Makoto Kohda from Tohoku University.

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30.09.2025

Bilayer Graphene Quantum Dots at QTech-Bp in Budapest

Two of our group members, Hubert Dulisch and Christoph Stampfer, presented the recent results on bilayer graphene quantum dots in the SpinQubits workshop at the QTech-Bp meeting in Budapest. The conference was hosted at the Hungarian Academy of Sciences (an impressive building), celebrating its 200th anniversary alongside 100 years of quantum mechanics. Besides the stimulating scientific program, we had great fun reconnecting with former group members.

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15.09.2025

Our group at the 2nd DPG Fall Meeting: 100 Years of Quantum Physics

Christian Volk and Christoph Stampfer from our group actively participated in the 2nd DPG-Herbsttagung 100 Years of Quantum Physics, held from 8–12 September 2025 at Georg-August-Universität Göttingen. Their contributions highlighted our ongoing research quantum dots in bilayer graphene. We are happy to have been part of this special event marking the International Year of Quantum.

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09.09.2025

PhD anniversary

As part of this year’s RWTH anniversary celebration of the 1999 graduating class, it was a great pleasure for us to welcome some of the former graduates back to the research facility of the 2nd Institute of Physics. (The jubilarians from left to right: Dr. Michael Fischer, Dr. Frank Dillmann, Dr. Jochen Dreßen, Dr. Andreas Rosenberger. Hosts at the institute: Dr. Bernd Beschoten and Prof. Dr. emer. Gernot Güntherodt)."

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19.08.2025

New publication: Current-induced brightening of vacancy-related emitters in hexagonal boron nitride

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Phys. Rev. Research 7, L032037 (2025)
We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. At the same time, we observe that the relative increase of the brightening effect scales linearly with the intensity of the excitation laser. Both observations can be explained in terms of a photo-assisted electroluminescence effect. Interestingly, emitters can also show the opposite behavior, i.e., a decrease in emitter intensity that depends on the gate leakage current. We explain these two opposing behaviors by different concentrations of donor and acceptor states in the hBN and show that precise control of the doping of hBN is necessary to gain control over the brightness of vacancy-related emitters by electrical means. Our findings contribute to a deeper understanding of vacancy-related defect emitters in hBN that is necessary to make use of their potential in quantum information processing.

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