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Instructions
Paper Templates

Please note that the protocol has the be written as a publication in the APS style (5 to 7 pages long). Download the file "Paper Templates". Open the file "scientificwriting.pdf" and read it carefully before the experiment day. The content of "scientificwriting.pdf" will be part of the discussion prior the experiment.

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Instructions
Quantum Hall effect: Video tutorial

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Anleitung

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M5 ultrasound instructions
Paper Templates
Video-Tutorial

Please note that the protocol has the be written as a publication in the APS style (5 to 7 pages long). Download the file "Paper Templates". Open the file "scientificwriting.pdf" and read it carefully before the experiment day. The content of "scientificwriting.pdf" will be part of the discussion prior the experiment.

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M6_HF_methods_instructions

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M7 mass spectrometry instructions

This lab course experiment teaches the physics and handling of a quadrupole mass spectrometer and the interpretation of mass spectra. In addition the participant should get first-hand experience with ultra-high vacuum technology, which is very important in surface science research.

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M8 PseudoMOSFET
video tutorial

In recent years, microelectronics has undergone an enormous evolution with a steadily increasing performance and complexity of integrated circuits. This has been made possible by modern CMOS technology and in particular the down-scaling of the structural dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) devices. However, scaling leads to the appearance of so-called short-channel effects (SCEs) that result in excessive leakage current and thus lead to an increased power consumption. Employing silicon-on-insulator (SOI) with ultrathin silicon thickness, SCEs can effectively be suppressed. The manufacturing process of SOI, however, is rather involved and can result in deteriorated carrier transport properties. Therefore, so-called pseudo-MOSFET are fabricated that facilitate a characterization of the electronic transport after a very short fabrication cycle. Using the silicon handle wafer as a large area back-gate allows manufacturing the pseudo-MOSFETs with only two lithography and etching process steps. Within this two-day experiment students will fabricate and characterize pseudo-MOSFETs. The Experiment starts always on Tuesday, the day before the date given the schedule. The 2nd day is the Wednesday, the date of which is given in the schedule.

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During this laboratory experiment, you will learn about a state of the art scanning tunnelling microscope which is in use in the Morgenstern group. This microscope is used to study the complex electron and spin systems with a high energy resolution and a spatial resolution down to the atomic scale. Currently the electronic and mechanic properties of single layer graphene, low dimensional semiconductor hetereostructures, spin chain systems, magnetic domain structures and phase change materials are under investigation. The exact topic of this experiment will be set by the tutor shortly before the experiment takes place. (For instructions contact the respective tutor)

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This experiment consists of two parts, in the morning you will go into a cleanroom and produce a twisted bilayer graphene sample encapsulated in hexagonal boron nitride. In the afternoon we will use Raman spectroscopy and measure the additional Raman peaks that appear due to the Moire-periodicity of the lattice. By analyzing this data you will try to estimate the twist angle of the two graphene layers, and see how it varies along the position of the sample. For literature, this paper is a good start: https://arxiv.org/abs/2104.06370

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In this experiment, you will characterize the modification of exciton binding energies and the quasiparticle bandgap of a 2dimensional semiconductor when placed in different dielectric environments. To achieve this, you will create a map of the reflectance spectra at every position (i.e. a (hyperspectral image) of 2dimensional semiconductor samples on different substrates. From the reflection spectra, the position of ground- and excited excitonic states will be extracted and the bandgap will be estimated. Contact the tutor and ask for literature at least 1 week prior to the experiment.

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In this experiment you learn how to form and then measure a single-electron transistor in a Si/SiGe heterostructure at 4 K. Such transistors are used as local charge sensors for detection of the state of a spin qubit. Please ask the tutor for literature at least 1 week prior to the experiment.

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A single electron spin confined to a semiconductor quantum dot is used to define a quantum bit. In this experiment you learn about a new approach to transfer qubit information: The single elecron is shuttled in a Si/SiGe device controlled by a propagating electrical wave within a one-dimensional channel at 10 mK. Please ask the tutor for literature at least 1 week prior to the experiment.

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** Experiment is done at home only ** The qubit trajectory of spin qubits is calculated, if control pulses are applied. Control pulses are optimized, if noise is presnt. The simulation is programmed in Python using qubit simulation framework. (For instructions please contact the respective tutor.)

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A single electron spin confined to a semiconductor quantum dot can be used to define a quantum bit. To transfer the qubit information across a long distance, the electron spin information shall be transferred as the polarization of a single photon. In this experiment you will probe a gate-defined quantum dot in GaAs cooled down to 4 K by laser excitation of single excitons. Please ask the tutor for literature at least 1 week prior to the experiment.

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